? 2000 ixys all rights reserved 1 - 2 v rsm v rrm type v v 1200 1200 dsei 30-12a symbol test conditions maximum ratings i frms t vj = t vjm 70 a i favm ?? t c = 85 c; rectangular, d = 0.5 26 a i frm t p < 10 s; rep. rating, pulse width limited by t vjm 375 a i fsm t vj = 45 c; t = 10 ms (50 hz), sine 200 a t = 8.3 ms (60 hz), sine 210 a t vj = 150 c; t = 10 ms (50 hz), sine 185 a t = 8.3 ms (60 hz), sine 195 a i 2 t t vj = 45 c t = 10 ms (50 hz), sine 200 a 2 s t = 8.3 ms (60 hz), sine 180 a 2 s t vj = 150 c; t = 10 ms (50 hz), sine 170 a 2 s t = 8.3 ms (60 hz), sine 160 a 2 s t vj -40...+150 c t vjm 150 c t stg -40...+150 c p tot t c = 25 c 138 w m d mounting torque 0.8...1.2 nm weight 6g symbol test conditions characteristic values typ. max. i r t vj = 25 cv r = v rrm 750 a t vj = 25 cv r = 0.8 ? v rrm 250 a t vj = 125 cv r = 0.8 v rrm 7ma v f i f = 30 a; t vj = 150 c 2.2 v t vj =25 c 2.55 v v t0 for power-loss calculations only 1.65 v r t t vj = t vjm 18.2 m r thjc 0.9 k/w r thck 0.25 k/w r thja 35 k/w t rr i f = 1 a; -di/dt = 100 a/ s; v r = 30 v; t vj = 25 c40 60 ns i rm v r = 540 v; i f = 30 a; -di f /dt = 240 a/ s1618a l 0.05 h; t vj = 100 c dsei 30 i favm = 26 a v rrm = 1200 v t rr = 40 ns i favm rating includes reverse blocking losses at t vjm , v r = 0.8 v rrm , duty cycle d = 0.5 data according to iec 60747 ixys reserves the right to change limits, test conditions and dimensions features international standard package jedec to-247 ad planar passivated chips very short recovery time extremely low switching losses low i rm -values soft recovery behaviour epoxy meets ul 94v-0 applications antiparallel diode for high frequency switching devices anti saturation diode snubber diode free wheeling diode in converters and motor control circuits rectifiers in switch mode power supplies (smps) inductive heating and melting uninterruptible power supplies (ups) ultrasonic cleaners and welders advantages high reliability circuit operation low voltage peaks for reduced protection circuits low noise switching low losses operating at lower temperature or space saving by reduced cooling fast recovery epitaxial diode (fred) a c to-247 ad c c a a = anode, c = cathode 036
? 2000 ixys all rights reserved 2 - 2 dsei 30, 1200 v 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 s t z thjc k/w 0 200 400 600 0 10 20 30 40 50 60 t vj =125 c i f =30a di f /dt t fr v fr t fr ns 0 200 400 600 800 1000 1200 v v fr 0 200 400 600 0.0 0.2 0.4 0.6 0.8 1.0 -di f /dt t rr typ. max. 0 40 80 120 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 k f q r i rm c t j 0 200 400 600 0 10 20 30 40 50 a max. typ. 1 10 100 1000 0 1 2 3 4 5 6 c i rm -di f /dt q r 01234 0 10 20 30 40 50 60 70 v v f i f t vj =150 c t vj =100 c t vj =25 c a i f =15a i f =30a i f =60a i f =30a v r = 540v t vj =100 c max. typ. i f =15a i f =30a i f =60a i f =30a t vj =100 c v r = 540v v r =540v t vj =100 c i f =15a i f =30a i f =60a i f =30a s a/s -di f /dt a/s a/s a/s dimensions dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 2.2 2.54 0.087 0.102 fig. 1 forward current fig. 2 recovery charge versus -di f /dt. fig. 3 peak reverse current versus versus voltage drop. -di f /dt. fig. 4 dynamic parameters versus fig. 5 recovery time versus -di f /dt. fig. 6 peak forward voltage junction temperature. versus di f /dt. fig. 7 transient thermal impedance junction to case.
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